不同品牌的同类产品如何通过可靠性试验（加速试验）来对比？

chenmanwen

同样是电压监控芯片（一个是IMP809，一个是CAT809），封装都是SOT-23，怎么在短时间内判断出哪个更可靠？求助各位了，指条明路吧~~~

sunjj

使用高温操作寿命(HTOL)试验.

chenmanwen

HTOL？样本量有讲究吗？

chenmanwen

这个芯片的工作和电压有关，那电压输入需要变化吗？

yeh

原帖由sunjj于2009-6-917:11发表
使用高温操作寿命(HTOL)试验.

MIN77pcs

yeh

原帖由chenmanwen于2009-6-917:38发表
这个芯片的工作和电压有关，那电压输入需要变化吗？

原则上不做电压调变
实施电压加速时则提高试验电压

chenmanwen

原帖由yeh于2009-6-918:58发表

MIN77pcs

为什么最少需要77片？

chenmanwen

HTOListypicallyusedwhenanICispresentthatrequiresmorethanonejunctionorgatetobebiasedfortheoperationofthedevice.Thetemperatureandvoltageconditionsusedinthestresswillvarywiththeproductbeingstressed.However,thetypicalstressambientis150degCwiththebiasappliedequalto80%ofratedvoltagefordiscretedevices.ForIC’s,thegoalistomaintainajunctiontemperatureof125degCor150degC.Testiscontinuouslybiasedbetweenmeasurementintervals.Normalmeasurementintervalsare0hours,504hours(3weeks)and1008hours(6weeks).
TheHighTemperatureOperatingLife(HTOL)orsteady-statelifetestisperformedtodeterminethereliabilityofdevicesunderoperationathightemperatureconditionsoveranextendedperiodoftime.Itconsistsofsubjectingthepartstoaspecifiedbiasorelectricalstressing,foraspecifiedamountoftime,andataspecifiedhightemperature(essentiallyjustalong-termburn-in).
Unlikeproductionburn-inwhichacceleratesearlylifefailures,HTOLtestingisappliedtoassessthepotentialoperatinglifetimesofthesamplepopulation(hencetheterm'lifetest').Itisthereforemoreconcernedwithaccelerationofwear-outfailures.Assuch,lifetestsshouldhavesufficientdurationstoassurethattheresultsarenotduetoearlylifefailuresorinfantmortality.
ThetestdurationmaybedecreasedbyincreasingtheambienttemperatureforconditionsAtoE(refertoTableI,Method1005).Unlessotherwisespecified,allintermediateandend-pointelectricaltestsmustbeperformedonthepartswithin96hours(24hoursforTa>=175degC)aftertheirremovalfromthespecifiedburn-inconditions.Ifnotspecified,anintermediateelectricaltestingshallbeperformedafter168(+72,-0)hoursandafter504(+168,-0)hoursSinceHTOLissimplylong-termburn-in,itisaccomplishedbyutilizinganyburn-inovencapableofoperatingcontinuouslyoverlongdurations.
FailuremechanismsacceleratedbyHTOLincludeTime-DependentDielectricBreakdown(TDDB),electromigration,hotcarriereffects,chargeeffects,mobileioniccontamination,etc.
引用:
MilStd883,Method1005Specs:
generally1000hoursmin.at125degC
max.ratedTcorTa<200degC(ClassB)
max.ratedTcorTa<175degC(ClassS)
ConditionA:steady-state,reversebias
ConditionB:steady-state,forwardbias
ConditionC:steady-state,power/reversebias
ConditionD:steady-state,parallelexcitation
ConditionE:steady-state,ringoscillator
ConditionF:steady-state,temp.-accelerated

OtherHTOLConditions(dependingonuse):
Ta=125C,1000H,maxPdis
Ta=150C,500H,maxPdis
125C<Tj<150C,1000H,maxPdis
150<Tj<175C,500H,maxPdis
Ta=125C,1000H,Dyn,maxPdis
Ta=150C,500H,Dyn,maxPdis
125C<Tj<150C,1000H,Dyn,maxPdis
150<Tj<175C,500H,Dyn,maxPdis
Ta=125C,120H,maxPdis

chenmanwen

我要测试的芯片Specifiedoverfulltemperaturerange：–40°Cto105°C，HTOL里说要达到125°C，已经超出这种芯片的温度范围了。。。。还能长时间在老化炉里工作吗？？

chenmanwen

有没有人能解释一下啊