一篇小分析文章
Advancesinintegratedcircuitfabricationtechnologyoverthepasttwo
decadeshaveresultedinintegratedcircuitswithsmallerdevicedimensionsand
largerareaandcomplexity.Thisevolutionoftechnologyhighlightselectromigration
asamajorreliabilityprobleminsiliconVLSIcircuits.Emphasisis
placedonthescopeanddetailoftheelectromigrationteststructures
themselves,andontheanalysisofelectromigrationeffectswithinvarioustypes
ofaluminumteststructures.
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