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RiAC器件降额标准 Electronic Derating For Optimum Performance

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RiAC器件降额标准 Electronic Derating For Optimum Performance



Part Type De-rating Parameter RAC D-rating Guidelines
Severe Benign NOTES
Capacitors Fixed Aluminum Voltage 70% 80% % max rated
    Temperature(℃) Tmax - 20℃ Tmax - 20℃  
  Fixed Ceramic Voltage 60% 70%  
    Temperature(℃) Tmax - 10℃ Tmax - 10℃  
  Fixed Mica/Glass Voltage 60% 70%  
    Temperature(℃) Tmax - 10℃ Tmax - 10℃  
  Fixed Paper/Plastic Voltage 60% 70%  
    Temperature(℃) Tmax - 10℃ Tmax - 10℃  
  Fixed Tantalum(non-solid) Voltage 70% 80%  
    Temperature(℃) Tmax - 20℃ Tmax - 20℃  
    Reverse Voltage 2% 2%  
  Fixed Tantalum(solid) Voltage 70% 80%  
    Temperature(℃) Tmax - 20℃ Tmax - 20℃  
    Reverse Voltage 2% 2%  
  Variable Air Voltage 60% 70%  
    Temperature(℃) Tmax - 10℃ Tmax - 10℃  
Circuit Breakers General Purpose Current 80% 90%  
Connectors All Types Voltage 70% 80% % of rated DWV
    Current 70% 85% % max rated
    Insert Temperature Limit(℃) Tmax - 50℃ Tmax - 25℃  
Crystals SAW Input Power(>500MHz) 13 dBm 10 dBm from max
    Input Power(<500MHz) 18 dBm 13 dBm from max
    Temperature(℃) 90℃ 90℃  
Diodes General Purpose Forward Current(IF) 90% <100%  
  (Signal/Switching) Reverse Voltage(VR) 70% 80%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  Mircrowave Power Dissipation(PD) 90% <100%  
  (Schittky/PIN) Reverse Voltage(VR) 70% 80%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  Power Rectifier Forward Current(IF) 90% <100%  
    Reverse Voltage(VR) 70% 80%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  Thyristor On-State Current(IT) 90% <100%  
    Off-State Voltage(VR) 70% 80%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  TVS Power Dissipation(PD) 90% <100%  
    Average Current(IO) 90% <100%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  Voltage Regulator Power Dissipation(PD) 90% <100%  
  /Reference Max Junction Temperature(TJ) 95℃ 115℃  
Electric Motors General Purpose Bearing Load 75% 75%  
    Temperature(℃) Tmax - 25℃ Tmax - 25℃  
Fans General Purpose Bearing Load 75% 75%  
    Temperature(℃) Tmax - 25℃ Tmax - 25℃  
Filters Capacitor Voltage 60% 70%  
    Temperature(℃) Tmax - 10℃ Tmax - 10℃  
  Inductors Current DC 90% <100%  
    Temperature(℃) Tmax - 25℃ Tmax - 25℃  
Fuzes   Normal Response Current 80% 90%  
    Time Delay Current 50% 85%  
Hybrids Thick Film Resistor Power Dissipation(PD) 50% 70%  
  Thin Film Resistor Power Dissipation(PD) 50% 70%  
  Chip Resistor Power Dissipation(PD) 50% 70%  
  Chip Capacitor Voltage 60% 70%  
  General Purpose Diode Forward Current(IF) 90% <100%  
    Reverse Voltage(VR) 70% 80%  
  Mircrowave Diode Power Dissipation(PD) 90% <100%  
    Reverse Voltage(VR) 70% 80%  
  Bipolar Transistor Power Dissipation(PD) 90% <100%  
    Voltage(VCE) 70% 80%  
  Field Effect Transistor Power Dissipation(PD) 90% <100%  
    Breakdown Voltage 90% <100%  
  Hybrid Package Max Junction Temperature(TJ) 95℃ 115℃  
Lamp Incandescent Voltage 94% 94%  
    Temperature(℃) <175℃ <175℃  
  Neon Current 98% 98%  
    Temperature(℃) <150℃ <150℃  
Magnetics Transformer(Audio) Surge Current 90% <100%  
    Surge Voltage 90% <100%  
    Hot Spot Temperature(℃) Tmax - 25℃ Tmax - 25℃  
  Transformer(Power) Surge Current 90% <100%  
    Surge Voltage 90% <100%  
    Hot Spot Temperature(℃) Tmax - 25℃ Tmax - 25℃  
  Transformer(Pulse) Surge Current 90% <100%  
    Surge Voltage 90% <100%  
    Hot Spot Temperature(℃) Tmax - 25℃ Tmax - 25℃  
  Coil(RF) DC Current 90% <100%  
    Surge Voltage 90% <100%  
    Hot Spot Temperature(℃) Tmax - 25℃ Tmax - 25℃  
MEMS Micro-Electro-Mechanical Driving Frequency 2 2 Ratio to Resonate Frequency
  System Relative Humidity 40% - 50% 40% - 50%  
Microcircuits Silicon Digital Fanout 90% <100%  
  (MOS & Bipolar) Frequency 90% <100%  
    Output Current 90% <100%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  Silicon Linear Power Dissipation(PD) 90% <100%  
  (MOS & Bipolar) Output Current 90% <100%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  GaAs Digital Max Channel Temperature(TCH) 105℃ 125℃  
  GaAs Linear RF Input Power 90% <100%  
    Power Dissipation(PD) 90% <100%  
    Max Channel Temperature(TCH) 105℃ 125℃  
  SiGe Digital Max Channel Temperature(TCH) 95℃ 115℃  
  SiGe Linear Max Channel Temperature(TCH) 95℃ 115℃  
Optoelectronics Injection Laser Diode Power Output 50% 75%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  Light Emitting Diode Max Junction Temperature(TJ) 95℃ 115℃  
  Photo Diode Max Junction Temperature(TJ) 95℃ 115℃  
  Photo Transistor Max Junction Temperature(TJ) 95℃ 115℃  
  Fiber Cabel Bend Radius 200% 200% % min. Rating
    Cable Tension 50% 50% % Rated Strength
    Fiber Tension 20% 20% % Proof Test
Relays General Purpose Contact Current 75% R Load 90% R Load  
      75% C Load 90% C Load  
      40% L Load 75% L Load  
      20% Motor 30% Motor  
      10% Filament 20% Filament Lamp
    Contact Power 50% 70%  
    Temperature(℃) Tmax - 20℃ Tmax - 20℃  
Resistors Fixed Composition Power Dissipation(PD) 50% 70%  
    Temperature(℃) Tmax - 30℃ Tmax - 18℃  
  Fixed Film Power Dissipation(PD) 50% 70%  
    Temperature(℃) Tmax - 40℃ Tmax - 24℃  
  Fixed Wirewound Power Dissipation(PD) 50% 70%  
    Temperature(℃) Tmax - 10℃ Tmax - 6℃  
  Variable Non-Wirewound Power Dissipation(PD) 50% 70%  
    Temperature(℃) Tmax - 52℃ Tmax - 31℃  
  Variable Wirewound Power Dissipation(PD) 50% 70%  
    Temperature(℃) Tmax - 32℃ Tmax - 19℃  
Switches General Purpose Contact Current 75% R Load 90% R Load  
      75% C Load 90% C Load  
      40% L Load 75% L Load  
      20% Motor 30% Motor  
      10% Filament 20% Filament  
    Contact Power 50% 70%  
    Contact Current(Surge) 80% 80%  
Thermistors   Power Dissipation(PD) 50% 50%  
    Temperature(℃) Tmax - 50℃ Tmax - 50℃  
Transistors Bipolar Junction Power Dissipation(PD) 90% <100%  
    Breakdown Voltage(VCE) 70% 80%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  FET(Silicon) Power Dissipation(PD) 90% <100%  
    Breakdown Voltage(VBR) 90% <100%  
    Max Junction Temperature(TJ) 95℃ 115℃  
  FET(GaAs) Power Dissipation(PD) 90% <100%  
    Max Channel Temperature(TCH) 105℃ 125℃  
  Hetro Junction Bipolar Power Dissipation(PD) 90% <100%  
  (GaAs) Max Channel Temperature(TCH) 105℃ 125℃  
  High Mobility(GaAs) Power Dissipation(PD) 90% <100%  
    Max Channel Temperature(TCH) 105℃ 125℃  
Tubes Cathode Ray Power Output 90% 80%  
    Temperature(℃) Tmax - 20℃ Tmax - 20℃  
  Microwave Power Output 80% 80%  
    Reflection Power 50% 50%  
    Duty Cycle 75% 75%  
    Temperature(℃) Tmax - 20℃ Tmax - 20℃  

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