加速测试模型大全
加速测试模型大全 SemiconductorDeviceReliabilityFailureModelsAbstract:Noabstract.
Keywords:ReliabilityModeling,FailureMechanisms,Electromigration,Corrosion,StressMigration
Authors:RichardBlish,NoelDurrant
TableofContents
Objectives,ScopeandExplanationofSymbols3
A.ELECTROMIGRATION.4
B.CORROSION.7
C.TIMEDEPENDANTDIELECTRICBREAKDOWN9
D.HOTCARRIERINJECTION12
E.SURFACEINVERSION(MobileIons).14
F.STRESSMIGRATION.16
G.TEMPERATURECYCLING&THERMALSHOCK19
H.SOFTERRORS(SingleEventUpsets).22
I.DesignofExperimentsforDeterminationofModelingParameters.24
J.Time-To-FailureDistributions.25 Abstract:Thisreviewpaperbringstogetherthemostprevalentandimportantmodelsforreliabilityfailuresinsemiconductordevices.Itgivesaexplanationofthefailure,thefailuremodel(s)andconstraintsofthemodels.Examplesarepresentedshowingtheapplicationofthemodelsforderivingaccelerationfactors.Originalreferencesareincludedforeachmodel.
帮admin老大补上abstract:)
谢谢楼主,好东东! 谢谢分享! 不错! 水平有限,看不懂,能不能搞点中文的上来 好像主要是wafer级的加速度模型,这个公司的资料确实不错
谢谢楼主了 不错,谢谢 谢谢分享
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